Part Number Hot Search : 
BDGLA16E SBR3504A 00113 12A28 74HC4 NF3RL 25201 SR2N7
Product Description
Full Text Search
 

To Download BCY79 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  BCY79 low noise audio amplifier description the BCY79 is a silicon planar epitaxial pnp transistor in jedec to-18 metal case. it is intented for use in audio input stages, driver stages and low-noise input stages. the npn complementary type is bcy59. ? internal schematic diagram december 2002 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) -45 v v ceo collector-emitter voltage (i b = 0) -45 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -200 ma i b base current -20 ma p tot total dissipation at t amb 25 o c at t c 25 o c 390 1 mw w t stg storage temperature -55 to 175 o c t j max. operating junction temperature 175 o c to-18 1/6
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 150 450 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = -35 v v ce = -35 v t c = 150 o c -2 -20 -100 -10 na na m a i cex collector cut-off current (v be = -2 v) v ce = -45 v t c = 100 o c-20 m a i ebo emitter cut-off current (i c = 0) v eb = -4 v -20 na v (br)ces collector-emitter breakdown voltage (v be = 0) i c = -10 m a -45 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = -2 ma -45 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -1 m a -5 v v ce(sat) * collector-emitter saturation voltage i c = -10 ma i b = -0.25 ma i c = -100 ma i b = -2.5 ma -0.12 -0.4 -0.25 -0.8 v v v be(sat) * base-emitter saturation voltage i c = -10 ma i b = -0.25 ma i c = -100 ma i b = -2.5 ma -0.6 -0.7 -0.7 -0.85 -0.85 -1.2 v v v be(on) * base-emitter (on) voltage i c = -10 m a v ce = -5 v i c = -2 ma v ce = -5 v i c = -10 ma v ce = -1 v i c = -100 ma v ce = -1 v -0.6 -0.55 -0.65 -0.68 -0.75 -0.75 v v v v h fe * dc current gain i c = -10 m a v ce = -5 v gr. viii gr. ix gr. x i c = -2 ma v ce = -5 v gr. viii gr. ix gr. x i c = -10 ma v ce = -1 v gr. viii gr. ix gr. x i c = -100 ma v ce = -1 v gr. viii gr. ix gr. x 30 40 100 180 250 380 120 160 240 45 60 60 200 270 340 250 350 500 260 360 500 310 460 630 400 630 1000 h fe * small signal current gain i c = -2 ma v ce = -5 v f = 1 khz gr. viii gr. ix gr. x 175 250 350 260 330 520 350 500 700 f t transition frequency i c = -10 ma v ce = -5 v f = 100 mhz 180 mhz * pulsed: pulse duration = 300 m s, duty cycle 1 % BCY79 2/6
electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit c cbo collector-base capacitance i e = 0 v cb = -10 v f = 1mhz 4.5 7 pf c ebo emitter-base capacitance i c = 0 v eb = -0.5 v f = 1mhz 11 15 pf nf noise figure i c = -0.2 ma v ce = -5 v f = 1khz r g = 2k w d f = 200hz 26db h ie input impedance i c = -2 ma v ce = -5 v f = 1 khz gr. viii gr. ix gr. x 3.6 4.5 7.5 k w k w k w h re reverse voltage ratio i c = -2 ma v ce = -5 v f = 1 khz gr. viii gr. ix gr. x 2 2 3 10 -4 10 -4 10 -4 h oe output admittance i c = -2 ma v ce = -5 v f = 1 khz gr. viii gr. ix gr. x 24 30 50 50 60 100 m s m s m s t d delay time v cc = -10 v i c = -10 ma i b1 = - 1 ma i c = -100 ma i b1 = - 10 ma 50 50 ns ns t r rise time v cc = -10 v i c = -10 ma i b1 = -1 ma i c = -100 ma i b1 = -10 ma 35 5 ns ns t s storage time v cc = -10 v i c = -10 ma i b1 = - i b2 = 1 ma i c = -100 ma i b1 = - i b2 = 10 ma 400 250 ns ns t f fall time v cc = -10 v i c = -10 ma i b1 = - i b2 = 1 ma i c = -100 ma i b1 = - i b2 = 10 ma 80 200 ns ns t on turn-on time v cc = -10 v i c = -10 ma i b1 = -1 ma i c = -100 ma i b1 = -10 ma 85 55 150 150 ns ns t off turn-off time v cc = -10 v i c = -10 ma i b1 = - i b2 = 1 ma i c = -100 ma i b1 = - i b2 = 10 ma 480 480 800 800 ns ns BCY79 3/6
collector-emitter saturation voltage dc current gain noise figure vs. frequency base-emitter saturation voltage normalized h parameters noise figure (f = 1 khz) BCY79 4/6
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b 0.49 0.019 d 5.3 0.208 e4.9 0.193 f 5.8 0.228 g 2.54 0.100 h1.2 0.047 i 1.16 0.045 l45 o 45 o l g i d a f e b h c to-18 mechanical data 0016043 BCY79 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BCY79 6/6


▲Up To Search▲   

 
Price & Availability of BCY79

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X